May 21, 2024
IGBT and Super Junction MOSFET Market

IGBT and Super Junction MOSFET Market driven by increasing Demand for Renewable Energy Sources.

Insulated gate bipolar transistors (IGBTs) and super junction MOSFETs are widely used in industrial, consumer electronics and power control applications. IGBTs are semiconductor devices that are widely used as an electronic switch as they can conduct large amounts of current and can withstand high voltages. They provide high efficiency, fast switching and low conduction losses. Super junction MOSFETs provide high current conduction capacity compared to standard MOSFETs while having lower RDS(on) characteristics. These properties make them commonly used in renewable energy applications such as solar inverters and wind turbine systems. The global demand for renewable energy sources is driving the demand for power electronic devices such as IGBTs and super junction MOSFETs owing to their efficient power handling capabilities.

The global IGBT and Super Junction MOSFET Market Size is estimated to be valued at US$ 16178.23 Mn  in 2023 and is expected to exhibit a CAGR of 12% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.

Market key trends:

One of the key trends in the IGBT and super junction MOSFET market is the increasing adoption of wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). WBG materials have intrinsic material properties that allow them to switch faster and operate at higher temperatures, voltages, and frequencies compared to conventional silicon semiconductors. These advantages help increase the power density and efficiency of power electronic systems. Semiconductor manufacturers are increasingly offering SiC and GaN based IGBT and MOSFET devices to capitalize on the performance benefits of WBG materials. The superior characteristics of WBG devices are well-suited for high power applications such as electric vehicles, fast charging stations, renewable energy conversion systems. The adoption of WBG devices is expected to drive innovation and growth of advanced power electronic designs over the forecast period.

Porter’s Analysis

Threat of new entrants: The IGBT and Super Junction MOSFET market requires large investments in R&D to develop new technologies. Established players hold patents that make entry difficult.

Bargaining power of buyers: Buyers have moderate bargaining power due to the presence of many manufacturers. However, switching costs are low.

Bargaining power of suppliers: Suppliers of raw materials have low bargaining power as IGBT and super junction MOSFET chips require common materials widely available.

Threat of new substitutes: There is no close substitute for IGBT and super junction MOSFET. Alternative technologies are not close replacements for their application in motor controls and renewable energy converters.

Competitive rivalry: The market is competitive with major global players holding significant share. Players differentiate based on product performance.

Key Takeaways

The Global IGBT And Super Junction MOSFET Market Size is expected to witness high growth over the forecast period. The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn  in 2023 and is expected to exhibit a CAGR of 12% over the forecast period 2023 to 2030.

Asia Pacific currently dominates the market owing to presence of manufacturing bases and high demand from sectors such as automotive, consumer electronics and renewable energy in countries such as China, Japan and South Korea. Europe is another major regional market for IGBTs and super junction MOSFETs driven by stringent emission norms mandating electrification of vehicles. Germany, U.K. and Italy are major countries contributing to the growth. North America is anticipated to showcase steady growth supported by ongoing infrastructure development and implementation of renewable integration policies in the U.S. and Canada.

Key players operating in the IGBT and Super Junction MOSFET market are Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd. Players are focused on product innovation and capacity expansion strategies to strengthen business footprint.

*Note:
1. Source: Coherent Market Insights, Public sources, Desk research
2. We have leveraged AI tools to mine information and compile it